In Current equation, I = K.μ.( VGS - VTH)2 ; where mobility (μ) and Threshold Voltage (VTH) are functions of Temperature
At high voltage μ determines the Drain current where as at lower voltages VTH determines the drain current. So at higher voltages device delay increase with temperature but at lower voltages, device delay decreases with temperature
At advanced Technology Nodes though the Threshold Voltage has not reduced much, but the Gate Overdrive Voltage has reduced due to the reduction of supply voltages
Temperature Inversion Effects are more observed in Technology Nodes below 40nm
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