FinFETs

16nm/14nm FinFETs:

The current technology in VLSI industry is using the FinFET, it is a new type of multigate 3D transistor. FinFET is necessary at 16nm Node onwards. It offers good power and performance advantages and are insensitive to random dopant fluctuations compared to MOSFET transistor.

            FinFETs are Field Effect Transistors that get their name because the transistor gate wraps around the transistor’s elevated channel or Fin. By raising the channel above the substrate instead of creating the channel just below the surface, it is possible to wrap the gate around up to three of its sides, providing much greater electrostatic control over the carriers within it.

Fin-FET overcomes the short-channel effect

On a bulk-silicon process, control over fin depth is more difficult, although the manufacturing issues appear to be manageable

Self-heating is the main problem with Fin-FET devices